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| PD-95291 IRF7807VD2PBF * Co-Pack N-channel HEXFET(R) Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output * Low Conduction Losses * Low Switching Losses * Low Vf Schottky Rectifier * Lead-Free FETKY MOSFET / SCHOTTKY DIODE A/S A/S A/S G 1 8 7 K/D K/D K/D K/D D 2 3 6 4 5 Description The FETKYTM family of Co-Pack HEXFET(R)MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation Schottky and Body Diode Average ForwardCurrent 25C 70C 25C 70C TJ, TSTG IF (AV) 25C 70C IDM PD Symbol VDS VGS ID SO-8 Top View DEVICE CHARACTERISTICS IRF7807VD2 RDS(on) QG Qsw Qoss 17m 9.5nC 3.4nC 12nC Max. 30 20 8.3 6.6 66 2.5 1.6 3.7 2.3 -55 to 150 Units V A W A C Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient Maximum Junction-to-Lead RJA RJL Max. 50 20 Units C/W C/W www.irf.com 1 10/08/04 IRF7807VD2PBF Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage Static Drain-Source on Resistance Gate Threshold Voltage Drain-Source Leakage Current BVDSS RDS(on) VGS(th) IDSS 1.0 50 6.0 IGSS QG QGS1 QGS2 QGD Qsw Qoss RG td (on) tr td tf (off) Min 30 Typ - 17 Max - 25 Units V m V A mA nA Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7.0A VDS = VGS,ID = 250A VDS = 24V, V GS = 0 VDS = 24V, VGS = 0, Tj = 100C VGS = 20V VGS=4.5V, ID=7.0A VDS = 16V Current* Gate-Source Leakage Current* Total Gate Charge* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Chg(Qgs2 + Qgd) Output Charge* Gate Resistance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 100 9.5 2.3 1.0 2.4 3.4 12 2.0 6.3 1.2 11 2.2 5.2 16.8 14 nC VDS = 16V, V GS = 0 VDD = 16V, ID = 7.0A ns VGS = 5V, RG= 2 Resistive Load Schottky Diode & Body Diode Ratings and Characteristics Parameter Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min VSD trr Qrr ton 36 41 Typ Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3.0A, VGS =0V Tj = 125C, Is = 3.0A, VGS =0V ns Tj = 25C, Is = 7.0A, VDS = 16V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: * Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board 50% Duty Cycle, Rectangular Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 7.0A. Device are 100% tested to these parameters. 2 www.irf.com IRF7807VD2PBF Power MOSFET Selection for DC/DC Converters Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losses in the control switch Q1 are given by; 4 Drain Current 1 Gate Voltage t2 VGTH t0 t1 t3 QGS1 QGS2 2 QGD Drain Voltage Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput This can be expanded and approximated by; Ploss = (Irms 2 x Rds(on ) ) Qgs 2 Qgd +I x x Vin x f + I x x Vin x f ig ig + (Qg x Vg x f ) + Qoss x Vin x f 2 Figure 1: Typical MOSFET switching waveform Synchronous FET The power loss equation for Q2 is approximated by; * Ploss = Pconduction + P + Poutput drive Ploss = Irms x Rds(on) This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Qgs1 and Qgs2, can be seen from Fig 1. Qgs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached (t1) and the time the drain current rises to Idmax (t2) at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1. Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure 2 shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance's Cds and Cdg when multiplied by the power supply input buss voltage. + ( g x Vg x f ) Q ( 2 ) Q + oss x Vin x f + (Qrr x Vin x f ) 2 *dissipated primarily in Q1. www.irf.com 3 IRF7807VD2PBF For the synchronous MOSFET Q2, Rds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs' susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain voltage dV/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn Typical Mobile PC Application The performance of these new devices has been tested in circuit and correlates well with performance predictions generated by the system models. An advantage of this new technology platform is that the MOSFETs it produces are suitable for both control FET and synchronous FET applications. This has been demonstrated with the 3.3V and 5V converters. (Fig 3 and Fig 4). In these applications the same MOSFET IRF7807V was used for both the control FET (Q1) and the synchronous FET (Q2). This provides a highly effective cost/performance solution. the MOSFET on, resulting in shoot-through current . The ratio of Qgd/Qgs1 must be minimized to reduce the potential for Cdv/dt turn on. Spice model for IRF7807V can be downloaded in machine readable format at www.irf.com. Figure 2: Qoss Characteristic 3.3V Supply : Q1=Q2= IRF7807V 93 92 91 Efficiency (%) 5.0V Supply : Q1=Q2= IRF7807V 95 94 93 Efficiency (%) 92 91 90 89 88 Vin=24V Vin=14V Vin=10V 90 89 88 87 86 85 84 83 1 2 3 Load current (A) 4 5 Vin=24V Vin=14V Vin=10V 87 86 1 2 3 Load current (A) 4 5 Figure 3 Figure 4 4 www.irf.com IRF7807VD2PBF RDS(on) , Drain-to -Source On Resistance ( ) 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 7.0A 0.030 1.5 0.025 1.0 0.020 ID = 7.0A 0.015 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 0.010 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 TJ , Junction Temperature ( C) VGS, Gate -to -Source Voltage (V) Fig 5. Normalized On-Resistance Vs. Temperature Fig 7. On-Resistance Vs. Gate Voltage 70 60 VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP 70 60 VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP IS, Source-to-Drain Current (A) 50 40 30 20 10 0 0 IS, Source-to-Drain Current (A) 50 40 30 20 10 0 0.0 V 380s PULSE WIDTH Tj = 25C 0.2 0.4 0.6 0.8 1 O.OV 380S PULSE WIDTH Tj = 150C 0 0.2 0.4 0.6 0.8 1 VSD, Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 7. Typical Reverse Output Characteristics Fig 8. Typical Reverse Output Characteristics www.irf.com 5 IRF7807VD2PBF 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 10 0.0001 t1 , Rectangular Pulse Duration (sec) Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 ID = 7.0A VDS = 16V VGS , Gate-to-Source Voltage (V) 4 3 2 1 0 0 2 4 6 8 10 12 QG , Total Gate Charge (nC) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 6 www.irf.com IRF7807VD2PBF MOSFET , Body Diode & Schottky Diode Characteristics 100 100 Tj = 150C Reverse Current - I R ( mA ) 10 125C 1 Tj = 125C Tj = 25C Instantaneous Forward Current - I F ( A ) 100C 75C 0.1 50C 10 0.01 25C 0.001 0 5 10 15 20 25 30 Reverse Voltage - VR (V) 1 Fig. 12 - Typical Values of Reverse Current Vs. Reverse Voltage 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage Drop - V SD ( V ) Fig. 11 - Typical Forward Voltage Drop Characteristics www.irf.com 7 IRF7807VD2PBF SO-8 (Fetky) Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] FOOTPRINT 8X 0.72 [.028] 6.46 [.255] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (FETKY) DATE CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF THE YEAR WW = WEEK A = AS S EMBLY S ITE CODE LOT CODE PART NUMBER INTERNAT IONAL RECTIFIER LOGO XXXX 807D1 8 www.irf.com IRF7807VD2PBF SO-8 (Fetky) Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 www.irf.com 9 |
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